O-band InAs/GaAs quantum Dot Micro-disk Lasers on SOI by Hybrid Epitaxy

By implementing III-V/Si hybrid growth technique, we demonstrate the first InAs quantum-dot micro-disk laser on SOI substrates. Threshold p mu mp power as low as 0.39 mW were achieved with the Q factor of 3900. (C) 2019 The Author(s)