4.8 Article

A CMOS-integrated quantum sensor based on nitrogen-vacancy centres

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NATURE ELECTRONICS
卷 2, 期 7, 页码 284-289

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NATURE PUBLISHING GROUP
DOI: 10.1038/s41928-019-0275-5

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  1. Army Research Office Multidisciplinary University Research Initiative (ARO MURI) biological transduction programme
  2. Kwanjeong Educational Foundation
  3. Singaporean-MIT Research Alliance (SMART)
  4. MIT Center of Integrated Circuits and Systems
  5. Master Dynamic Limited
  6. National Science Foundation (NSF) Research Advanced by Interdisciplinary Science and Engineering (RAISE) Transformational Advances in Quantum Systems (TAQS)

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The nitrogen-vacancy (NV) centre in diamond can be used as a solid-state quantum sensor with applications in magnetometry, electrometry, thermometry and chemical sensing. However, to deliver practical applications, existing NV-based sensing techniques, which are based on bulky and discrete instruments for spin control and detection, must be replaced by more compact designs. Here we show that NV-based quantum sensing can be integrated with complementary metal-oxide-semiconductor (CMOS) technology to create a compact and scalable platform. Using standard CMOS technology, we integrate the essential components for NV control and measurement-microwave generator, optical filter and photodetector-in a 200 mu m x 200 mu m footprint. With this platform we demonstrate quantum magnetometry with a sensitivity of 32.1 mu THz(-1/2) and simultaneous thermometry.

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