Growth rate influence on indium oxide thin films grown by an ultrasonic spray technique

a thin films laboratory, Abstract Indium oxide (In2O3) thin films have been grown prosperously on glass substrates by an ultrasonic spray CVD process. The structural, morphological, optical and electrical studies of the films with controlled growth rate induced during elaboration by changing the solution flow rate from 20 to 60 mL/h. The X-ray diffraction (XRD) exhibit that the films are polycrystalline with centered cubic structure, whereas the predominant plane in the films change from (222) to (400) plane. The crystallite size of the films slightly increases with the increase of growth rate where it is varied between 26 and 32 nm. UV-Visible spectroscopy show that the average transmittance is about 80% in the visible region. The optical band gap decreases with anincrease of the growth rate from 3.93 to 3.62 eV. Where the high value of band gap can be correlated with the preferential orientation of the (222) plane. The electrical resistivity decreases with the increase of the growth rate in the range of 20 - 5.5 (10(2)Omega Cm). From these results we can say that the indium oxide thin films have a promising properties which make them applicable in the photovoltaic field.