期刊
PHYSICAL REVIEW B
卷 100, 期 8, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.100.085204
关键词
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资金
- Leverhulme Trust [RL-2012-001]
- UK Engineering and Physical Sciences Research Council [EP/M020517/1]
- Graphene Flagship [785219-GrapheneCore2]
- University of Oxford Advanced Research Computing (ARC) facility
- ARCHER UK National Supercomputing Service under the AMSEC and CTOA projects
- PRACE DECI-14 resource Abel at UiO
- PRACE-15 and PRACE-17 resources MareNostrum at BSC-CNS
- NSF DMREF [1534303]
- NSF [1710298]
- NSF CCMR MR-SEC Award [1719875]
- AFOSR [FA9550-17-1-0048]
- Intel
- EPSRC [EP/M020517/1] Funding Source: UKRI
Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray optical disks. A major limitation for further adoption of GaN in power electronics is its low hole mobility. In order to address this challenge, here we investigate the phonon-limited mobility of wurtzite GaN using the ab initio Boltzmann transport formalism, including all electron-phonon scattering processes, spin-orbit coupling, and many-body quasiparticle band structures. We demonstrate that the mobility is dominated by acoustic deformation-potential scattering, and we predict that the hole mobility can significantly be increased by lifting the split-off hole states above the light and heavy holes. This can be achieved by reversing the sign of the crystal-field splitting via strain or via coherent excitation of the A(1) optical phonon through ultrafast infrared optical pulses.
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