期刊
NPJ 2D MATERIALS AND APPLICATIONS
卷 3, 期 -, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/s41699-019-0116-4
关键词
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资金
- Science Foundation Ireland (SFI) [15/IA/3131, 12/RC/2278, 15/SIRG/3329]
- SFI/HEA Irish Center for High-End Computing (ICHEC)
- Irish Research Council (IRC) [GOIPD/2016/643, GOIPD/2018/653]
- Graphene Flagship [785219]
- Irish Research Council (IRC) [GOIPD/2016/643] Funding Source: Irish Research Council (IRC)
In this work, we present a comprehensive theoretical and experimental study of quantum confinement in layered platinum diselenide (PtSe2) films as a function of film thickness. Our electrical measurements, in combination with density functional theory calculations, show distinct layer-dependent semimetal-to-semiconductor evolution in PtSe2 films, and highlight the importance of including van der Waals interactions, Green's function calibration, and screened Coulomb interactions in the determination of the thickness-dependent PtSe2 energy gap. Large-area PtSe2 films of varying thickness (25-65 nm) were formed at 400 degrees C by thermally assisted conversion of ultra-thin platinum films on Si/SiO2 substrates. The PtSe2 films exhibit p-type semiconducting behavior with hole mobility values up to 13 cm(2)/V.s. Metal-oxide-semiconductor field-effect transistors have been fabricated using the grown PtSe2 films and a gate field-controlled switching performance with an I-O(N)/I(OFF )ratio of >230 has been measured at room temperature for a 2.5-3 nm PtSe2 film, while the ratio drops to <2 for 5-6.5 nm-thick PtSe2 films, consistent with a semiconducting-to-semimetallic transition with increasing PtSe2 film thickness. These experimental observations indicate that the low-temperature growth of semimetallic or semiconducting PtSe2 could be integrated into the back-end-of-line of a silicon complementary metal-oxide-semiconductor process.
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