期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 7, 期 34, 页码 10635-10641出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9tc01801h
关键词
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资金
- Ministry of Science & ICT through the NRF - Korea government [NRF-2017R1A2B4001955, NRF-2017R1C1B2005254]
- Chung-Ang University
The successful implementation of amorphous In-Ga-Zn-O with a mobility >10 cm(2) V-1 s(-1) in the electronic industry indicates the significant potential of the amorphous oxide semiconductor (AOS) materials in the next-generation optoelectronics. However, the low-cost, large-area solution processes for AOS materials require high annealing temperatures (>400 degrees C), which is not favorable for flexible substrate application. Moreover, the lack of a doping method for AOS materials possessing an amorphous disorder structure further limits its application. In this study, a fullerene derivative (C60-malonic acid) was employed as the bulk charge-transfer dopant in solution-processed amorphous indium-zinc oxide (a-IZO) thin-film transistors. With the facile bulk charge-transfer doping from a mixed precursor solution, high-performance thin-film transistors were realized at a low annealing temperature of 250 degrees C. At an optimized doping concentration, the carrier mobility increased from 1.21 cm(2) V-1 s(-1) for an undoped a-IZO film to 2.42 cm(2) V-1 s(-1) for a doped a-IZO one. Furthermore, optimized doping enhanced the device stability under the bias stress condition. Therefore, the threshold voltage (V-th) shift during the positive bias stress condition (V-G = 50 V; V-DS = 25 V) for 1000 s drastically reduced from 28.9 V for an undoped device to 16.0 V for a device with optimized doping (1%).
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