期刊
JOURNAL OF RAMAN SPECTROSCOPY
卷 49, 期 2, 页码 317-323出版社
WILEY
DOI: 10.1002/jrs.5287
关键词
annealing; defects; epoxy; graphene
类别
资金
- Agence Nationale de la Recherche [ANR-11-IDEX-0002-02, ANR-10-LABX-0037-NE]
- Region Midi-Pyrenees [14050232]
- Programme Investissements dAvenir
- Agence Nationale de la Recherche (ANR) [ANR-10-LABX-0037] Funding Source: Agence Nationale de la Recherche (ANR)
We explore the defect formation on single-layer graphene partially suspended over a microcavity upon etching by a focused electron beam in a reactive oxygen atmosphere. The formation of oxygenated defects in an area of several m(2) around the cut is studied by Raman spectroscopy. The narrow symmetric Raman D band has the same bandwidth as the G band line width of supported graphene. For suspended graphene, the D bandwidth is larger. From the ratio of the intensity of the Raman D and D band (I-D/I-D), it is concluded that mainly sp(3)-type defects are formed on supported graphene and more defects with a different spectral signature are formed on suspended graphene. Annealing in reductive H-2/Ar atmosphere is found to remove bonded oxygen on supported graphene, whereas on suspended graphene with higher density of defects, defects are removed only partially.
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