期刊
PHYSICAL REVIEW B
卷 100, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.100.115141
关键词
-
资金
- MEXT
- JSPS KAKENHI [JP16H06346, JP15K17714, JP26102012, JP25000003, JP16H4140]
- MEXT Nanotechnology Platform Program (Molecule and Material Synthesis)
- MEXT HPCI Strategic Programs for Innovative Research (SPIRE) [hp150112, hp140128]
- Overseas Research Fellowship Program of the Japan Society for the Promotion of Science
- JST ERATO
High-T-C superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are material-dependent or universal phenomena in the proximity of the Mott transition by investigating similar but different material systems. An organic Mott transistor is suitable for this purpose owing to the adjacency between the two-dimensional Mott insulating and superconducting states, simple electronic properties, and high doping/bandwidth tunability in the same sample. Here we report the temperature dependence of the transport properties under electron and hole doping in an organic Mott electric-double-layer transistor. At high temperatures, the bad-metal behavior widely appears except at half filling, regardless of the doping polarity. At lower temperatures, the pseudogap behavior is observed only under hole doping, while the Fermi-liquid-like behavior is observed under electron doping. The bad-metal behavior seems a universal high-energy-scale phenomenon, while the pseudogap behavior is based on lower-energy-scale physics that can be influenced by details of the band structure.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据