期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 50, 期 48, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aa935d
关键词
nanowire; photodiode; photodetector; nitride semiconductors
资金
- ANR 'Inverstissement d'Avenir' programme 'GaNeX' [ANR-11-LABX-2014]
- ANR 'Inverstissement d'Avenir' programme 'NanoSaclay' [ANR-10-LABX-0035]
- project 'PLATOFIL' [ANR-14-CE26-0020-01]
- EU ERC project 'NanoHarvest' [639052]
- H2020 ITN Marie Curie project 'INDEED' [722176]
- RFBR [15-02-08282 A]
- program of fundamental research of the Presidium of the RAS [1.3.3.3, 1]
Single nitride nanowire core/shell n-p photodetectors are fabricated and analyzed. Nanowires consisting of an n-doped GaN stem, a radial InGaN/GaN multiple quantum well system and a p-doped GaN external shell were grown by catalyst-free metal-organic vapour phase epitaxy on sapphire substrates. Single nanowires were dispersed and the core and the shell regions were contacted with a metal and an ITO deposition, respectively, defined using electron beam lithography. The single wire photodiodes present a response in the visible to UV spectral range under zero external bias. The detector operation speed has been analyzed under different bias conditions. Under zero bias, the -3 dB cut-off frequency is similar to 200 Hz for small light modulations. The current generation was modeled using non-equilibrium Green function formalism, which evidenced the importance of phonon scattering for carrier extraction from the quantum wells.
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