期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 8, 期 19, 页码 4785-4792出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.7b02028
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资金
- National Basic Research Program of China [2014CB931702]
- NSFC [61704082]
- NSFC-RGC [5151101197]
- National Natural Science Foundation of China [51502139]
- Fundamental Research Funds for the Central Universities [30917015106, 30917014107]
- Natural Science Foundation of Jiangsu Province of China [BK20170851]
- China Postdoctoral Science Foundation [2014M560425]
- PAPD of Jiangsu Higher Education Institutions
Nowadays, the research on perovskite transistors is still in its infancy, despite the fact that perovskite-based solar cells and light-emitting diodes have been widely investigated. Two major hurdles exist before obtaining reliable perovskite-based transistors: the processing difficulty for their sensitivity to polar solvents and unsatisfactory perovskite quality on the transistor platform. Here, for the first time, we report on high-performance all-inorganic perovskite FETs profiting from both van der Waals epitaxial boundary-free ultrathin single crystals and completely dry-processed transfer technique without chemical contaminant. These two crucial factors ensure the unprecedented high-quality perovskite channels. The achieved FET hole mobility and on-off ratio reach 0.32 cm(2) V-1 s(-1) and 6.7 x 10(3), respectively. Moreover, at the low temperature, the mobility and on-off ratio can be enhanced to be 1.04 cm(2) V-1 s(-1) and 1.3 X 10(4). This work could open the door for the FET applications based on perovskite single crystals.
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