Diamond Phase (sp(3)-C) Rich Boron-Doped Carbon Nanowalls (sp(2)-C): Physicochemical and Electrochemical Properties

The growth of B-CNW with -different boron doping levels controlled by the [B]/[C] ratio in plasma, and the influence of boron on the obtained material's structure, surface morphology, electrical properties, and electrochemical parameters, such as Delta E and k degrees, were investigated. The fabricated boron-doped carbon nanowalls exhibit activity toward ferricyanide redox couple, reaching the peak separation value of only 85 mV. The flatband potential and the concentration of boron carriers were estimated in the B-CNW samples using the Mott Schottky relationship. It was shown that the vertically oriented carbon planes are characterized by p-type condUctivity and very high hole-acceptor concentration (3.33 X 10(23) cm(-3) for a highly doped sample), which provides high electrical conductivity. The enhanced electrochemical performance of B-CNWs electrodes is an advantageous feature that can be applied in ultrasensitive detection or energy storage devices: