期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 121, 期 38, 页码 20821-20833出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.7b06365
关键词
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资金
- Polish National Science Centre (NCN) [2014/14/M/ST5/00715, 2012/07/D/ST5/02269, 2014/14/E/ST7/00104]
- NSF-797 MRI Grant [1429563]
- KY NASA EPSCoR RIDG Grant [NASA RID-3-NNX15AK28A, 3200000029-17-229]
- KSEF-RDE Grant [148-502-17-397]
- KY NSF EPSCoR RSP [3200000271-17-212]
- WKU Research Foundation RCAP I Award
- Foundation for Polish Science
- Faculty of Electronics, Telecommunications and Informatics of the Gdansk University of Technology
The growth of B-CNW with -different boron doping levels controlled by the [B]/[C] ratio in plasma, and the influence of boron on the obtained material's structure, surface morphology, electrical properties, and electrochemical parameters, such as Delta E and k degrees, were investigated. The fabricated boron-doped carbon nanowalls exhibit activity toward ferricyanide redox couple, reaching the peak separation value of only 85 mV. The flatband potential and the concentration of boron carriers were estimated in the B-CNW samples using the Mott Schottky relationship. It was shown that the vertically oriented carbon planes are characterized by p-type condUctivity and very high hole-acceptor concentration (3.33 X 10(23) cm(-3) for a highly doped sample), which provides high electrical conductivity. The enhanced electrochemical performance of B-CNWs electrodes is an advantageous feature that can be applied in ultrasensitive detection or energy storage devices:
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