期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 121, 期 22, 页码 12447-12453出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.7b03199
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资金
- Region Haute-Normandie
The present work reports a nanoscale chemical and structural study on the influence of Ce content in Ce-doped SiO1.5 thin films via atom probe tomography (APT). Using this technique, we can explore 3D mapping of the atomic distribution inside a material. Such an investigation is crucial to optimize the optical properties of Ce-doped SiOx films. As a result, we clearly identify the influence of cerium on, the phase separation process, on the silicon nanocrystal growth, and on the formation of cerium silicate nanoparticles occurring during annealing treatments. The observed nanoscale structure is correlated with the optical properties measured by room temperature photoluminescence spectroscopy thus leading to a comprehensive understanding of the properties of Ce-doped SiO1.5 thin films.
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