4.6 Article

Intrinsic interfacial van der Waals monolayers and their effect on the high-temperature superconductor FeSe/SrTiO3

期刊

PHYSICAL REVIEW B
卷 100, 期 14, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.100.144103

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资金

  1. U.S. DOE [DE-FG02-09ER46554]
  2. McMinn endowment at Vanderbilt University
  3. Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
  4. U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
  5. U.S. National Science Foundation, Division of Materials Research [DMR-1335215]

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The sensitive dependence of monolayer materials on their environment often gives rise to unexpected properties. It was recently demonstrated that monolayer FeSe on a SrTiO3 substrate exhibits a much higher superconducting critical temperature T-c than the bulk material. Here, we examine the interfacial structure of FeSe/SrTiO3 and the effect of an interfacial Ti1+xO2 layer on the increased T-c using a combination of scanning transmission electron microscopy and density functional theory. We find Ti1+xO2 forms its own quasi-two-dimensional layer, bonding to both the substrate and the FeSe film by van der Waals interactions. The excess Ti in this layer can reconstruct the FeSe Fermi surface in a manner consistent with experimental observations. Moreover, the interfacial layer introduces symmetry-breaking distortions in the FeSe film that may favor a T-c increase. These results suggest that this common substrate may be functionalized to modify the electronic structure of a variety of thin films and monolayers.

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