期刊
MATERIALS HORIZONS
卷 6, 期 9, 页码 1930-1937出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9mh00633h
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资金
- National Natural Science Foundation of China [11804190]
- Shandong Provincial Natural Science Foundation of China [ZR2019QA011, ZR2019MEM013]
- Qilu Young Scholar Program of Shandong University
- Taishan Scholar Program of Shandong Province
- Youth Science and Technology Talents Enrollment Project of Shandong Province
Directional control of electronic behaviors is highly desirable for developing novel devices. One major obstacle is the lack of feasible means with a switchable manner. Here, we propose that the direction-control of anisotropic electronic behaviors can be achieved via ferroelastic switching. Through first-principles calculations, we reveal that single-layer alpha-MPI (M = Zr, Hf) not only exhibits ultrahigh carrier mobility with an anisotropic character, but also harbors excellent ferroelasticity. The ferroelasticity in single-layer alpha-MPI shows moderate switching barriers and distinct ferroelastic signals, beneficial for its application in memory devices. Meanwhile, the carrier mobility of single-layer alpha-MPI is extremely high in the y direction, while low in the x direction, suggesting that the carriers tend to feature directional migration. Such coexistence indicates that the directional control of carrier migration is achievable in single-layer alpha-MPI by 90 degrees reversible ferroelastic switching. Our findings thus provide an outstanding avenue for designing novel controllable electronic devices.
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