4.6 Review

Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 7, 期 40, 页码 12388-12414

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/C9TC03933C

关键词

-

资金

  1. Knowledge Transfer Partnership - Innovate UK
  2. PragmatIC Printing Ltd.

向作者/读者索取更多资源

The past 20 years has witnessed a rapid expansion of applications using metal oxide semiconductor devices that ranges from displays technology, to clothing and packaging. Details of these technological applications have been the subject of technical reviews, but the materials and specifically the metal oxide devices have not been coherent reviewed. This work brings together a wide range of information to present an overview of the history and development of metal oxide devices, from their earliest inception to the most recent advances. This begins with a discussion of the first developments of metal oxides and their applications, and the earliest realisations of metal oxide semiconducting devices and moves on to a discussion of the factors that need to be considered in designing metal oxide semiconducting devices, including; material choice, deposition methods and device structure. This is followed by an in-depth review of the effects of material defects and concludes with a review of the current state of applications based on metal oxide semiconductors.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据