期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 7, 期 40, 页码 12532-12543出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9tc04282b
关键词
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资金
- Solliance
- Light Management in New Photovoltaic Materials (LMPV) research program of the Netherlands Organization for Scientific Research (NWO)
- Dutch Ministry of Economic Affairs, via The Top-consortia Knowledge and Innovation (TKI) Program High-Efficiency Hybrid Tandem Solar Cells'' (HIEFF) [TEZ0214010]
- Dutch Ministry of Economic Affairs, via The Top-consortia Knowledge and Innovation (TKI) Program High-Efficiency Si Perovskite Tandem Solar Cells (HIPER)'' [TEUE116193]
- Dutch Ministry of Economic Affairs, via The Top-consortia Knowledge and Innovation (TKI) Program ALD for hybrid perovskite solar cells (ALD4PSC)'' [TKITOE1409105]
- German Federal Ministry of Education and Research (BMBF) via program Materialforschung fuer die Energiewende'' [03SF0540]
Low-temperature atomic layer deposition (ALD) offers significant merits in terms of processing uniform, conformal and pinhole-free thin films, with sub-nanometer thickness control. In this work, plasma-assisted atomic layer deposition (ALD) of nickel oxide (NiO) is carried out by adopting bis-methylcyclopentadienyl-nickel (Ni(MeCp)(2)) as precursor and O-2 plasma as co-reactant, over a wide table temperature range of 50-300 degrees C. A growth rate of 0.32 angstrom per cycle is obtained for films deposited at 150 degrees C with an excellent thickness uniformity on a 4 inch silicon wafer. Bulk characteristics of the NiO film together with its interfacial properties with a triple cation hybrid perovskite absorber layer are comprehensively investigated, with the aim of integrating NiO as hole transport layer (HTL) in a p-i-n perovskite solar cell (PSC) architecture. It is concluded that key to efficient solar cell performance is the post-annealing treatment of the ALD NiO films in air, prior to perovskite synthesis. Post-annealing leads to better wettability of the perovskite layer and increased conductivity and mobility of the NiO films, delivering an increase in short-circuit current density (J(sc)) and fill factor (FF) in the fabricated devices. Overall, a superior 17.07% PCE is achieved in the post-annealed NiO-based PSC when compared to the 13.98% PCE derived from the one with pristine NiO.
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