4.4 Article

Facile hydrothermal synthesis and characterization of cesium-doped PbI2 nanostructures for optoelectronic, radiation detection and photocatalytic applications

期刊

JOURNAL OF NANOPARTICLE RESEARCH
卷 19, 期 10, 页码 -

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SPRINGER
DOI: 10.1007/s11051-017-4020-6

关键词

Lead iodide; FT-Raman spectroscopy; SEM; Optical properties; Dielectric properties; Radiation studies; Semiconductor nanomaterials

资金

  1. Deanship of Scientific Research at King Khalid University [R.G.P.2/3/38]

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Low-temperature hydrothermal-assisted synthesis of pure and cesium (Cs) (1, 3, 5, 7 and 10 wt%) doped lead iodide (PbI2) nanorods and nanosheets have been achieved successfully for the first time. The structural and vibrational studies confirm the formation of a 2H-polytypic PbI2 predominantly. Scanning electron microscope analysis confirms the formation of well-aligned nanorods of average size similar to 100 nm at low concentration and nanosheets of average thicknesses in the range of similar to 20-40 nm at higher concentrations of Cs doping. The presence of Cs doping was confirmed by energy dispersive X-ray study. Ultra-violet-visible absorbance spectra were recorded, and energy gap was calculated in the range of 3.33 to 3.45 eV for pure and Cs-doped PbI2 nanostructures which is higher than the bulk value (i.e., similar to 2.27 eV) due to quantum confinement effect. Dielectric constant, loss, and AC conductivity studies have been done. Enhancement in Gamma linear absorption coefficient due to Cs doping confirms the suitability of prepared nanostructures for radiation detection applications. Furthermore, the photocatalytic performance of the synthesized nanostructures was evaluated in the decolorization of methyl green (MG) and methyl orange (MO) under the illumination of visible light (lambda > 420 nm). The observed photocatalytic activity for 5 and 7 wt% Cs-doped PbI2 was observed to be more than pure PbI2 and also > 10 times higher than the commercially available photocatalysts. The results suggest that the prepared nanostructures are highly applicable in optoelectronic, radiation detection and many other applications.

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