期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 1, 期 9, 页码 1740-1745出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.9b00367
关键词
HfO2; ZrO2; HZO; ferroelectricity; wake-up effect; FRAM
资金
- European Union's Horizon 2020 Research and Innovation Programme [780302]
- GDR OxyFun
The wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/HZO/TiN structures deposited by magnetron sputtering on silicon are compared. The maximum remanant polarization is higher than 21 mu C/cm(2) for both samples, but a strong difference is observed in the electrical behavior. For the mesa sample, the difference between the maximum and initial remanent polarization is only 3 mu C/cm(2), whereas it is around 14 mu C/cm(2) in the non-mesa case. We discuss the root causes of these behaviors in light of GIXRD results.
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