期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 1, 期 8, 页码 1449-1457出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.9b00256
关键词
ferroelectric HfO2; ferroelectric thin films; strain engineering; ferroelectric oxides; oxide thin films
资金
- Spanish Ministry of Economy, Competitiveness and Universities, through the Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0496]
- AEI/FEDER, EU [MAT2017-85232-R]
- Generalitat de Catalunya [2017 SGR 1377]
- Ramon y Cajal contracts [RYC-2017-22531, RYC-2012-11709]
- Spanish Ministry of Economy, Competitiveness and Universities [SEV-2015-0496-16-3]
- ESF
- China Scholarship Council (CSC) [201506080019]
- Materials Sciences and Engineering Division of Basic Energy Sciences of the Office of Science of the U.S. Department of Energy
- [MAT2015-73839-JIN]
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 (HZO) and La0.67Sr0.33MnO3 (LSMO) electrodes were grown on a set of single crystalline oxide (001)-oriented (cubic or pseudocubic setting) substrates with a lattice parameter in the 3.71-4.21 angstrom range. The lattice strain of the LSMO electrode, determined by the lattice mismatch with the substrate, is critical in the stabilization of the orthorhombic phase of HZO. On tensilely strained LSMO electrodes, most of the HZO film is orthorhombic, whereas the monoclinic phase is favored when LSMO is relaxed or compressively strained. Therefore, the HZO films on TbScO3 and GdScO3 substrates present substantially enhanced ferroelectric polarization in comparison to films on other substrates, including the commonly used SrTiO3. The capability of having epitaxial doped HfO2 films with controlled phase and polarization is of major interest for a better understanding of the ferroelectric properties and paves the way for fabrication of ferroelectric devices based on nanometric HfO2 films.
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