期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 7, 期 1, 页码 1114-1118出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2019.2947695
关键词
TFET; SOI; ambipolar; low power
资金
- Natural Science Foundation of China [61674161, 61504083]
- National Science and Technology Major Project of the Ministry of Science and Technology of China [2017ZX01032101-002]
- Open Project of State Key Laboratory of Functional Materials for Information
We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current (I-on)/off-current (I-off) ratio reaches very high value of similar to 10(8) at V-ds = -0.5 V with a smaller tunneling junction width at the drain. The innovative T-shape design allows integration of both TFET and metaloxide semiconductor field-effect transistors (MOSFET) operation modes in one structure. Both TFET and MOSFET operation modes are experimentally demonstrated in this device structure, which provide the implementation of the selector function with the single device.
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