期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 26, 期 3, 页码 601-608出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2017.2680738
关键词
Pirani gauge; vacuum measurement; thermal conductance; post-complementary metal oxide semiconductor (CMOS) microelectromechanical systems (MEMs) process; Wheatstone bridge structure; wafer-level package
类别
资金
- National High Technology Research and Development Program of China (863 Program) [2015AA042602]
This paper presents micro-Pirani vacuum gauges using low-resistivity monocrystal silicon for the heaters and the heat sinks. We designed a new Pirani gauge with an embedded Wheatstone bridge made by thick-silicon resistors that allows an improvement in resolution and sensitivity. With the optimized Wheatstone bridge structure, the temperature coefficient of the gauges pressure measure decreases from 2.5%/degrees C to 0.74%/degrees C, and the resolution was optimized from 0.071 to 0.008 Torr at 1 Torr. In addition, the gauges were packaged into non-hermetic cavities by wafer-level AlGe eutectic bonding to undergo the wafer-dicing process, with sensitivity improved from 1.65 to 17.1 V/Torr at 1 Torr. [2016-0320]
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