期刊
NATURE ELECTRONICS
卷 2, 期 11, 页码 499-505出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41928-019-0330-2
关键词
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资金
- National Key Research & Development Program [2016YFA0201901, 2016YFA0201902]
- National Science Foundation of China [61621061, 61427901, 61888102]
- Beijing Municipal Science and Technology Commission [D171100006617002 1-2]
It is anticipated that the scaling of silicon complementary metal-oxide-semiconductor (CMOS) devices will end around 2020, but alternative technologies capable of maintaining advances in computing power and energy efficiency have not yet been established. Among various options, carbon-nanotube-based electronics has been shown to be one of the most promising candidates. A range of methods have been developed to prepare high-purity semiconducting carbon nanotubes suitable for use in integrated circuits, and 5 nm nanotube transistors with superior performance to that of silicon CMOS have been demonstrated. Here, we explore the potential of carbon nanotube digital electronics. We examine the development of nanotube-based CMOS field-effect transistors and the different nanotube material systems available to build integrated circuits. We also highlight the medium-scale integrated circuits created to date and consider the challenges that exist in delivering large-scale systems.
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