4.6 Article

Phosphorus dual-site driven CoS2@S, N co-doped porous carbon nanosheets for flexible quasi-solid-state supercapacitors

期刊

JOURNAL OF MATERIALS CHEMISTRY A
卷 7, 期 46, 页码 26618-26630

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c9ta09646a

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资金

  1. National Research Foundation of Korea (NRF) - Korea government (MIST) [NRF-2019R1A2C2090443, NRF-2017M3A7B4041987]
  2. Korea Electric Power Corporation [R19XO01-23]
  3. China Scholarship Council of China (CSC) [201708260026]

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Battery-type electrode materials typically suffer from intrinsically slow faradaic reaction kinetics, which severely limits the energy and power density of supercapacitors. Herein, we develop a hybrid of P-doped CoS2 (P-CoS2) nanoparticles confined in highly conductive P, S, N tri-doped carbon (P, S, N-C) porous nanosheets grown on carbon fibers through in situ thermal conversion of a metal-organic framework, followed by sulfurization and phosphorization. In this structural architecture, the heteroatom-enriched porous carbon nanosheets serve as a protective coating to inhibit changes in the volume of the P-CoS2 nanoparticles and offer efficient pathways for rapid charge transfer. The nanosized P-CoS2 substantially shortens the electrolyte ion diffusion distance and shows enhanced covalency after the introduction of P atoms, resulting in decreased migration energy of electrons during the redox reaction. In particular, the P dopants exhibit improved electrical conductivity and reduced adsorption energy between OH- and the nuclear Co atoms in P-CoS2, evidenced by density functional theory calculations. The designed P-CoS2@P, S, N-C electrode exhibits excellent rate capability and long-term cycling stability. Moreover, flexible solid-state asymmetric supercapacitor devices with P-CoS2@P, S, N-C as the cathode and Co@P, N-C as the anode deliver a high energy density of 56.4 W h kg(-1) at 725 W kg(-1) and a capacitance retention of 94.1% over 5000 cycles at 20 A g(-1). The devices also exhibit uniform performance and outstanding bendability with slight capacitance decay under different bending conditions.

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