期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 28, 期 11, 页码 7912-7921出版社
SPRINGER
DOI: 10.1007/s10854-017-6492-7
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资金
- Human Resources Development program of Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant - Korea government Ministry [20124010203180]
- Ministry of Science, ICT [NRF2015R1A2A2A01006856]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20164030201310] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ternary Cu-Sn-S system, Cu2SnS3 (CTS) thin films have been successfully deposited via successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on the structural, morphological, wettability and optical properties of CTS material is studied. The XRD studies confirm formation of triclinic (mohite) phase of CTS material. The SEM images show that entire film surface is covered by compact nearly spherical grains over growth of spongy clusters. The Brunauer-Emmett-Teller (BET) analysis revealed that the surface area of CTS material is 2.11 m(2) g(-1). The wettability study indicates hydrophilic nature of CTS samples. The optical band gap is decreased from 1.36 to 0.98 eV with increase in film thickness. The photoelectrochemical (PEC) study of CTS material shows anodic photocurrent indicating P-type electrical conductivity.
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