期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 29, 期 5, 页码 3648-3656出版社
SPRINGER
DOI: 10.1007/s10854-017-8295-2
关键词
-
类别
资金
- DST (India) under the scheme of the Science and Engineering Research Board (SERB) [SB/FTP/PS-131/2013]
- Ministry of Trade, Industry and Energy (MOTIE, Korea) [10063682]
- National Research Foundation of Korea (NRF) - Ministry of Education [2017R1D1A1A09000823]
Fluorine-doped tin oxide (SnO2:F, FTO) thin films were prepared by the nebulized spray pyrolysis technique on glass substrates using tin(IV) chloride pentahydrate (SnCl2 center dot 5H(2)O) and ammonium fluoride (NH4F) as source materials. Different volumes of solvent were used to prepare the spray solution, and their effects on structural, optical, morphological, and electrical properties were investigated. X-ray diffraction patterns revealed the polycrystalline tetragonal structure of FTO films. FESEM images demonstrated well-aligned trigonal-shaped nano-grains. Optical band gap values were estimated to be in the range of 3.71-3.66 eV by Tauc's plot. The effects of solvent volume on the resistivity, conductivity, carrier concentration, mobility, and figure of merit of FTO films were examined. The lowest electrical resistivity and sheet resistance values were 1.90 x 10(-4) Omega cm and 4.96 Omega/cm, respectively.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据