Machining damage of monocrystalline silicon by specific crystallographic plane cutting of wire electrical discharge machining

The machining damage on the certain crystal face of single crystal silicon, the manufacture of which are under diverse parameters of wire electrical discharge machining (WEDM), is tested by means of the micro-observation and X-ray diffraction rocking curve method. In the process of monocrystalline silicon machined by WEDM, when the pulse width is small, the basic methods of material removal are melting and gasification, which are also called normal removal methods. When the pulse width increases to a certain degree beyond the normal removal, thermal spalling removal also occurs, which is considered a compound removal method. The depth of machining damage is difficult to control. The structure of machining damage under two conditions is divided into normal removal and compound removal in this study. To make the depth of machining damage easy to control, compound removal should be avoided when processing the single crystal silicon by certain crystal face cutting of WEDM. Such an approach can provide the premise and guarantee for the subsequent processing of single crystal silicon with certain crystal face in the future.