期刊
JOURNAL OF MATERIALS SCIENCE
卷 52, 期 17, 页码 10119-10126出版社
SPRINGER
DOI: 10.1007/s10853-017-1217-0
关键词
-
资金
- Polish National Science Centre (NCN) [2014/14/M/ST5/00715]
- Faculty of Electronics, Telecommunications and Informatics of the Gdansk University of Technology
- Grant Etiuda NCN [UMO-2014/12/T/ST5/00028]
The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher sp(2)/sp(3) ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据