出版社
IEEE
DOI: 10.1109/asmc.2019.8791781
关键词
-
资金
- Project to develop cross-sectoral technologies for IOT promotion
A 500 nm-width nickel-through-Si-via (Ni-TSV) for future 3D-LSI/IC integration at chip-to-wafer/wafer-to-wafer level was proposed and fabricated successfully on 12-inch LSI wafer. An aspect ratio of 20 for 500 nm-width Ni-TSVs has been realized. A modified electroless-Ni plating process was employed to seamlessly and nearly completely fill these Ni-TSVs. We were able to fabricate Ni-TSVs successfully with reproducibility by using via-last approach.
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