期刊
JOURNAL OF LUMINESCENCE
卷 191, 期 -, 页码 107-111出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2016.10.037
关键词
Porous silicon; Zinc oxide; Electroluminescence; White light; Light-emitting devices
类别
资金
- Ministerio de Economia y Competitividad [MAT2013-46572-C2-1-R, MAT2014-54826-C2-1-R]
Porous-Silicon/Zinc Oxide (PS-ZnO) nanocomposites can be processed by a combination of electro-chemical etching of PS and sol-gel infiltration of ZnO, which leads to complex interfaces of ZnO permeated in the PS matrix. In this work, an approach consisting on the determination of transport mechanisms and identification of electroluminescence emission bands from the heterojunction, has been followed to derive the energy band diagram. Charge transport at room temperature has been determined in ITO/PS-ZnO/p(+)-Si/Al structures through current-voltage characteristics, showing that direct and Fowler-Nordheim (FN) tunneling are the main conduction mechanisms at low and high bias voltages, respectively. White electroluminescence composed of three main bands (similar to 490, similar to 550 and similar to 620 nm) is observed at forward bias. Emission starts at a threshold voltage of 3.9 +/- 0.2 V, in coincidence with the change in conduction mechanism from direct to FN tunneling. A band diagram of the device is derived from the emission and transport properties, which is coherent with previous electronic and micro structural properties of the starting n-ZnO and p(+) -Si. (C) 2016 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据