期刊
JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 35, 期 8, 页码 1450-1455出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2016.2639542
关键词
Electro-optic modulators; indium compounds; Mach-Zehnder modulators; semiconductor waveguide
We report novel high-bandwidth InP-based Mach-Zehnder modulator and in-phase/quadrature (IQ) modulators that we realized by combining an n-i-p-n heterostructure and a capacitively loaded traveling wave electrode. The extremely low electrical and optical loss structure enhances the 3-dB electro-optic bandwidth of over 67 GHz without degrading other properties such as driving voltage and optical loss. The modulator also exhibits a static extinction ratio of over 24 dB with a V pi of less than 1.5 V for the entire C-band. Furthermore, we demonstrate the first 120-Gbaud rate IQ modulation without optical pre equalization, and 100-Gb/s non-return-to-zero on-off keying modulation with a dynamic extinction ratio of over 10 dB.
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