期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 1, 期 12, 页码 2483-2488出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.9b00653
关键词
IGZO; cluster; morphology; amorphous; hydrolysis; bias stability
资金
- Hangzhou MOTech, Inc. [442551-YY-41292]
lusters in a precursor solution play an important role in metal oxide semiconductor films. Additives including acetic acid (AcOH) and acetylacetone (acac) were applied in a precursor solution to adjust the morphology and electronic performance of solution processed amorphous InGaZnO (IGZO). The average size of clusters was brought down, and size distribution was narrowed. Consequently, a film with smaller roughness was obtained. A thin film transistor (TFT) was fabricated using the IGZO film. Interface trap density was reduced by 18%. Saturated mobility increased from 4.0 to 5.5 cm2/(V s), and turn on voltage shift under positive bias stress decreased from 1.6 to 0.3 V/10000
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