期刊
2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)
卷 -, 期 -, 页码 1047-1051出版社
IEEE
DOI: 10.1109/ECTC.2019.00164
关键词
Electroless Ni; Barrier/Seed layer; Cu-TSV; Si interposer; Cu-diffusion
Si interposer with 10 mu m-width, 100 mu m-deep through-silicon via (TSV) has been fabricated using electroless (EL) Ni as barrier and seed layers, and characterized for their electrical resistance. The chemistry of electroless-Ni plating bath was meticulously adjusted for the conformal formation of Ni along the TSV side wall. From the resistance value of 36 m Omega per TSV obtained from the Kelvin measurement of these Cu-TSV chain showed that the electroless Ni layer well acts as a good seed layer for completely filling the high aspect ratio TSVs by Cu-electroplating.
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