期刊
2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)
卷 -, 期 -, 页码 620-627出版社
IEEE
DOI: 10.1109/ECTC.2019.00099
关键词
Silicon-Interconnect Fabric; 10 mu m Fine Pitch Interconnects; Cu-Cu Thermal Compression Bonding
资金
- DARPA
- Semiconductor Research Corporation (SRC)
- ONR
- UC-MRPI
- UCLA CHIPS Consortium
We demonstrate a solderless direct copper-copper (Cu-Cu) thermal compression bonding (TCB) process for die-to-wafer assembly in ambient environment using a novel in-situ formic acid vapor treatment. We show that this approach produces excellent Cu-Cu bonds with an average shear strength of >150 MPa. Using this TCB process, we demonstrate dielet assemblies on the Silicon-Interconnect Fabric (Si-IF) platform with fine-pitch (<= 10 mu m) Cu-Cu interconnects. Further, we show electrical continuity across multiple dies on the Si-IF with an interconnect specific contact resistance of <0.7 Omega-mu m(2).
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