28GHz Through Glass Via (TGV) Based Band Pass Filter Using Through Fused Silica Via (TFV) Technology

We present the design, fabrication, and characterization of a band pass filter with a center frequency of 28 GHz using a Half Mode Substrate Integrated Waveguide (HMSIW) architecture on a smooth and thin fused silica substrate for the reduction of insertion loss. Filter properties are implemented by using a single Complimentary Split Ring Resonator (CSRR) structure. High out-of-band attenuation is achieved by using four spur line structures embedded in the microstrip feed line, which contributes to overall size reduction of the device. Design is simulated using High Frequency Structural Simulator (HFSS). Devices are fabricated using laser machining and microfabrication. The measured insertion loss is 3dB and the total area of the device is 5.719 mm(2).