期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 7, 期 1, 页码 1145-1150出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2019.2952314
关键词
GaN; HEMTs; output power density (P-out); power added efficiency (PAE); Q-band; reliability; W-band
资金
- French RENATECH Network
- French Government through Program PIA EQUIPEX LEAF [ANR-11-EQPX-0025]
- French Defense Procurement Agency (DGA) under Project EDA-EuGaNiC
- French Defense Procurement Agency (DGA) under Contract FUI-VeGaN
We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 mu A/mm, a high breakdown voltage and a F-T/F-max of 63/300 GHz at a drain voltage of 20V. Despite residual trapping effects, state of the art large signal characteristics at 40 GHz and 94 GHz are achieved. For instance, an outstanding power added efficiency of 65% has been reached at V-DS = 10V in pulsed mode at 40 GHz. Also, an output power density of 8.3 W/mm at V-DS = 40V is obtained associated to a power added efficiency of 50%. At 94 GHz, a record CW output power density for Ga-polar GaN transistors has been reached with 4 W/mm. Additionally, room temperature preliminary robustness assessment at 40 GHz has been performed at V-DS = 20V. 24 hours RF monitoring showed no degradation during and after the test.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据