期刊
ACS APPLIED NANO MATERIALS
卷 2, 期 10, 页码 6701-+出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.9b01587
关键词
graphene/HgTe CQDs junction; infrared; gate-tunable photoresponse; photovoltaic detection; interfacial photocarrier transport
资金
- GRF grant from the Research Grant Council of the Hong Kong Special Administrative Region Government [CityU11205514, CityU11205815]
- CityU Research Grant [9667166]
Graphene-based vertical heterostructures are of great interest as emerging electronic and optoelectronic devices. Here, we report the study of photovoltaic response from graphene/HgTe quantum-dot junction. The graphene/HgTe quantum-dot junction combines the high carrier mobility of graphene and tunable infrared optical absorption of HgTe colloidal quantum dots, which offers promising route for the next-generation infrared optoelectronics. We demonstrate that both the sign and magnitude of the short-circuit photocurrents and open-circuit voltages can be controlled by the applied gate voltage, which tunes the Fermi level and the interfacial built-in potential across the junction. The interfacial energy band diagram is deduced to provide the fundamental understanding of the essential physics behind the graphene/quantum-dot film junction.
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