An application of Open-Loop Active Gate Voltage Control for GaN Transistors

This paper presents the feasibility of an open loop control of Active Gate Voltage Control (AGVC) during turn-on and turn-off of GaN HEMTs in order to reduce the current or voltage switching speed. For the turn-on, two parameters (V-int, T-int) are used to reduce the current transient speed while for the turn-off three parameters (T-0, V-int0, T-int0) are used to adjust the voltage transient speed. The results show that the GaN HEMT can be controlled by the AGVC. However this technique is limited by the response time of the commercial gate drivers.