An amorphous titanium-oxide film oxidized anodically on amorphous Ti-10at%V-15at%Si alloy ribbons demonstrated excellent electric properties. Specifically, it showed a remarkable increase in parallel capacitance Cp, series capacitance Cs, time constant RCs, and decrease in the dielectric loss with decreasing frequency. The oblate semicircle after a semicircle with a Warburg region in the Nyquist diagram and rapid increases in the real impedance in the low-frequency region in the Bode diagram demonstrated a parallel circuit comprising an electric transport resistance Re (0.64 MO), and a high electric double-layer capacitance C-dl (604.0 mu F/cm(2)) at a nanometer-sized (similar to 53 nm in convex size) uneven surface between an upper (Ti0.84V0.11Si0.05)O-1.655 layer approximately 45-nm deep and air. The superior capacitances could be elucidated by electrostatic induction of a large positive charge to the uneven oxide surface based on the electronic conduction state derived from TiO2/VO2 nanostructural interfaces in the upper oxide layer. Copyright (C) EPLA, 2020
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