期刊
2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
卷 -, 期 -, 页码 1953-1959出版社
IEEE
DOI: 10.1109/ecce.2019.8912882
关键词
medium voltage converter; 10 kV SiC MOSFET; grid application; high dv/dt
资金
- Power America program
- Engineering Research Center Program of the National Science Foundation
- CURENT Industry Partnership Program
- Southern Company
Medium voltage (MV) power converters using high voltage (HV) Silicon Carbide (SiC) power semiconductors result in great benefits in weight, size, efficiency and control bandwidth. However, challenges still exist on the components design considering HV insulation and noise immunity requirements in the MV SiC based power converter. A 5-level MMC based transformer-less grid-connected dc/ac converter is developed for 13.8 kV medium voltage grid using 10 kV SiC MOSFETs. The key components, including gate driver with high dv/dt immunity and fast reliable protection, isolated power supply with low parasitic capacitance, voltage/current sensors with high noise immunity, and passives following related insulation standard are provided. A 25 kV dc-link phase-leg is demonstrated, and the experimental results are presented.
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