3.8 Proceedings Paper

Medium Voltage (13.8 kV) Transformer-less Grid-Connected DC/AC Converter Design and Demonstration Using 10 kV SiC MOSFETs

出版社

IEEE
DOI: 10.1109/ecce.2019.8912882

关键词

medium voltage converter; 10 kV SiC MOSFET; grid application; high dv/dt

资金

  1. Power America program
  2. Engineering Research Center Program of the National Science Foundation
  3. CURENT Industry Partnership Program
  4. Southern Company

向作者/读者索取更多资源

Medium voltage (MV) power converters using high voltage (HV) Silicon Carbide (SiC) power semiconductors result in great benefits in weight, size, efficiency and control bandwidth. However, challenges still exist on the components design considering HV insulation and noise immunity requirements in the MV SiC based power converter. A 5-level MMC based transformer-less grid-connected dc/ac converter is developed for 13.8 kV medium voltage grid using 10 kV SiC MOSFETs. The key components, including gate driver with high dv/dt immunity and fast reliable protection, isolated power supply with low parasitic capacitance, voltage/current sensors with high noise immunity, and passives following related insulation standard are provided. A 25 kV dc-link phase-leg is demonstrated, and the experimental results are presented.

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