High-isolation Low-coupling-capacitance Standalone Gate Drive Power Supply for SiC-based Medium-Voltage Power Electronic Systems

This paper presents a standalone gate drive power supply for medium-voltage SiC-based power electronic systems. The developed power supply is rated at 10 W and provides regulated 24 V at its output with output short-circuit protection. It features high-isolation working voltage of 10 kV RMS, creepage distance of over 100 mm and coupling capacitance of 1 pF between its input and the output terminals. The power supply has 4 times smaller coupling capacitance and 2.6 times higher power density compared to the commercial product.