Enhanced Electrical Properties of AlInN/AlN/GaN Heterostructure using AlxGa1-xN/AlyGa1-yN superlattice

In this work, the role of an AlxGa1-xN/AlyGa(1-y)N superlattice (SL) layer in the buffer layer on the dislocation density and transport property of AlInN/AIN/GaN heterostructures grown on 150 mm silicon (111) substrate is investigated. It is found that the threading dislocation density in the GaN buffer strongly depends on the composition, thickness and the position of the SL layer. Electron mobility of 1,940 cm(2)/V-s with two dimensional electron gas density of 1.45x10(13) cm(-2), resulting in a sheet resistance of 221 ohm/square, is achieved by using 10 pairs of Al0.2Ga0.8N/Al0.8Ga0.2N SL placed just above the thin AlN nucleation layer on Si substrate.