期刊
出版社
IEEE
DOI: 10.1109/nvmts47818.2019.9043368
关键词
FRAM; Depolarization; Retention; Wake-up; Memory Reliability
资金
- German Ministry of Economic Affairs and Energy (BMWi) project [16IPCEI310]
- Electronic Component Systems for European Leadership Joint Undertaking [692519]
- European Union
- German Science Foundation (DFG)
The influence of depolarization and its role in causing data retention failure in ferroelectric memories is investigated. Ferroelectric Hf0.5Zr0.5O2 thin films 8 nm thick incorporated into a metal-ferroelectric-metal capacitor are fabricated and characterized with varying thicknesses of an Al2O3 interfacial layer. The magnitude of the depolarization field is adjusted by controlling the thickness of the Al2O3 layer. The initial polarization and the change in polarization with electric field cycling is strongly impacted by the insertion of Al2O3 within the device stack. Transient polarization loss is shown to get worse with larger depolarization fields and data retention is evaluated up to 85 degrees C.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据