期刊
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
卷 -, 期 -, 页码 3219-3223出版社
IEEE
DOI: 10.1109/pvsc40753.2019.8981165
关键词
Epitaxial layers; III-V semiconductor materials; Photovoltaic cells; Wide band gap semiconductors; Heterojunctions
资金
- French government [ANR-IEED-002-01]
Today's most efficient III-V solar cells rely on InGaP materials and are mostly grown by metal organic vapor phase epitaxy (MOVPE). Here, we report on an AlGaAs-based solar cell grown by solid source molecular beam epitaxy (MBE), with a certified conversion efficiency of 18.7%, and a 1.73eV bandgap designed for Si-based dual junction tandem devices. Material characterizations were carried out using Hall effect, secondary-ion mass spectrometry (SIMS) and X-Ray diffraction for the optimization of growth parameters of two conventional homojunction AlGaAs and InGaP solar cells. External quantum efficiencies (EQE) and I-V measurements demonstrate issues related to n-type AlGaAs and p-type InGaP layers. We show an important efficiency increase by merging the best of each structure: a thick p-AlGaAs base with tunable bandgap, and a thin 50 nm InGaP emitter.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据