期刊
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
卷 -, 期 -, 页码 -出版社
IEEE
DOI: 10.1109/iedm19573.2019.8993622
关键词
-
资金
- ASCENT, one of six centers in JUMP, a SRC program - DARPA
- AFOSR/NSF 2DARE program
- ARO
A novel ferroelectric semiconductor junction (FSJ) based two-terminal memristor is demonstrated as a synaptic device for the first time. In this novel FSJ device, a metal-ferroelectric semiconductor (FS)-metal crossbar structure is used, instead of a metal-ferroelectric insulator-metal structure for a conventional ferroelectric tunnel junction (FTJ), so that an ultrathin ferroelectric insulator is not required. Meanwhile, the FSJ also offers energy efficiency advantage over the conventional filament-based resistive random access memory (RRAM) device because the conductance of the FSJ scales with the junction area. Experimentally, a ferroelectric semiconductor alpha-In2Se3 based crossbar FSJ (c-FSJ) as a synaptic device is demonstrated. Ferroelectric resistive switching is clearly observed in both planar FSJ (p-FSJ) by in-plane polarization switching and c-FSJ by out-of-plane polarization switching. Conductance potentiation and depression in the c-FSJ are measured and benchmarked at both original size and projected to 32 nm node with different synaptic devices. alpha-In2Se3 c-FSJ shows good on-line learning accuracy (similar to 92 %), low latency and energy consumption due to the short write pulse width and large RON.
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