期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 7, 期 1, 页码 878-887出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2019.2925150
关键词
3D integration; 2D layered materials; h-BN; MoS2; WSe2; beyond-Moore integration; electromagnetic interference; graphene; interconnect; interface thermal conductivity; Moore's law; thermal profile; vertically-stacked devices
资金
- UC Multicampus Research Programs and Initiatives (MRPI) Research Program [MRP-17-454999]
- Japan Science and Technology Agency Core Research for Evolutional Science and Technology (CREST) Program [SB180064]
- Army Research Office (ARO) [W911NF1810366]
- U.S. Department of Defense (DOD) [W911NF1810366] Funding Source: U.S. Department of Defense (DOD)
As a possible pathway to continue Moore's law indefinitely into the future as well as unprecedented beyond-Moore heterogeneous integration, we examine the prospects of building monolithic 3D integrated circuits (M3D-IC) with atomically-thin or 2D van der Waals materials in terms of overcoming the major drawbacks of current 3D-ICs, including low process thermal budget, inter-tier signal delay, chip-overheating, and inter-tier electrical interference problems. Our holistic evaluation includes consideration of the electrical performance, thermal issues, and electromagnetic interference as well as attention to the synthesis methods necessary for low-temperature transfer-free 2D materials growth in M3D fabrication. Both in-plane and out-of-plane heat-dissipation in 3D-ICs made with 2D materials are evaluated and compared with those of bulk materials. Electrostatic and high-frequency electric-field simulations are conducted to assess the screening effect by graphene and effect of scaling down the inter-layer dielectric (ILD) thickness. Our analysis reveals for the first time that the 2D-based M3D integration can offer >ten-folds higher integration density compared with through-silicon-via (TSV)-based 3D integration, and >150% integration density improvement with respect to conventional M3D integration. Therefore, 2D materials provide a significantly better platform, with respect to bulk materials (such as Si, Ge, GaN), for realizing ultra-high-density M3D-ICs of ultimate thinness for next-generation electronics.
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