期刊
JOURNAL OF CRYSTAL GROWTH
卷 464, 期 -, 页码 221-225出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.12.088
关键词
MOVPE; GaN; scintillators; yellow band
资金
- Grand Agency of the Czech Republic (GACR) [16-11769S]
- MSMT NPU [LO1603 - ASTRANIT]
- Student Grant Competition of Technical University of Liberec
We have optimized technology of GaN buffer layer growth with respect to the application in fast scintillation structures. The deep defect luminescence so called yellow band (YB) with decay time up to tens of microseconds is undesired for these applications and should be suppressed or at least the ratio of intensities of excitonic to YB maximum has to be considerably increased. The required photoluminescence properties were achieved by optimization of growth parameters of nucleation and coalescence layer on sapphire substrate. We have shown that decrease of NH3 flow, decrease of coalescence temperature, increase of nucleation time and nucleation pressure lead to improvement of the structure and luminescence properties of the buffer layer. Results indicate a significant increased ratio of excitonic/YB luminescence intensity.
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