期刊
JOURNAL OF CRYSTAL GROWTH
卷 478, 期 -, 页码 64-70出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2017.08.025
关键词
Metalorganic chemical vapor deposition; Metalorganic vapor phase epitaxy; Semiconducting III-V materials; Semiconducting ternary compounds; Defects
资金
- National Research Foundation (NRF) of Singapore through the Singapore-MIT Alliance for Research and Technology's (SMART) Low Energy Electronic Systems (LEES) IRG
Compositionally graded InAlAs buffers grown by metal-organic chemical vapor deposition are impaired by phase separation occurring at In content higher than 35%. Phase separation results in rough epilayers with poor crystalline material quality. By introducing low temperature grown InGaAs interlayers in the compositionally graded InAlAs buffer, the surface roughness decreases, allowing a grading of up to In0.60Al0.40As without any phase separation occurring. This composite buffer is applied to fabricate a 200 mm diameter InP-on-Si virtual substrate with a threading dislocation density around 1 x 10(8) cm(2). (C) 2017 Elsevier B.V. All rights reserved.
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