期刊
JOURNAL OF CRYSTAL GROWTH
卷 463, 期 -, 页码 67-71出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2017.01.042
关键词
A3. Physical vapor deposition processes; B2. Semiconducting silicon compounds; B3. Heterojunction semiconductor devices; B3. Solar cells
资金
- Tokyo University of Agriculture and Technology TLO Co., Ltd
- Grants-in-Aid for Scientific Research [26289099] Funding Source: KAKEN
We investigated a method of controlling the crystallinity of an n-type SiC (n-SiC) layer grown on a p-type 4 degrees-off-axis Si(1 1 1) (p-Si) substrate by our sputtering method for use as SiC/Si devices. An n-SiC layer grown on p-Si at 810 degrees C exhibits columnar 3C-SiC(1 1 1) crystal growth. However, it contains many defects near the n-SiC/p-Si interface. We then propose a method in which a 10-nm-thick nondoped SiC (i-SiC) interlayer is grown at a low temperature of 640 degrees C prior to the growth of the n-SiC layer at 810 degrees C, which results in a decrease in the number of defects at the SiC/p-Si interface and an intensive increase in the crystallinity of the n-SiC, compared with that of n-SiC grown at 810 degrees C without the inter layer, probably via effective interlayer reconstruction and an enhancement in the crystallinity of the i-SiC interlayer itself during the n-SiC growth. Furthermore, the n-SiC/i-SiC-interlayer/p-Si structure was applied as a Si-based solar cell and the energy conversion efficiency of the n-SiC/p-Si solar cell effectively increased with the insertion of the i-SiC interlayer. (C) 2017 Elsevier B.V. All rights reserved.
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