期刊
JOURNAL OF CRYSTAL GROWTH
卷 477, 期 -, 页码 174-178出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.12.031
关键词
Phase equilibria; Molecular beam epitaxy; Zn1-xMgxO; Semiconducting II-VI materials; Energy gap engineering
资金
- Ministry of Science and Technology of the Republic of China [MOST 104-2221-E-110-012-MY3]
- Aim for the Top University Project
- Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University
- National Natural Science Foundation of China [51602309]
A series of wurtzite ZnO and Zn-1 xMgxO (x=0.41-0.66) epilayers have been grown on ScAlMgO4 (SCAM) (0001) substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction results indicate that only a barely recognized amount of rocksalt phase exists in the epilayer having the highest MgO content of 66%. The epilayers with 41% and 50% MgO exhibit reasonable full width at half maximum (FWHM) values of 1200-1800 for the rocking curve of the (0002)(wz) reflection. However, both the surface morphology and the FWHM value deteriorate with further addition the MgO content to 66%. (C) 2016 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据