期刊
JOURNAL OF MATERIALS CHEMISTRY A
卷 8, 期 1, 页码 207-217出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9ta11318e
关键词
-
资金
- National Basic Research Program of China [2014CB931700]
- State Key Laboratory of Optoelectronic Materials and Technologies
Element doping is an effective approach to modify photocatalysts for boosting solar H-2 evolution, especially anion doping. However, there still exists controversy regarding the role of heavy doping in photocatalysis. Herein, 2D heavily N-doped ZnIn2S4 is reported based on an in-depth perspective on the role that N heteroatoms play in improving the photocatalytic properties. The electron dynamics was investigated via femtosecond transient absorption spectroscopy which revealed that the introduction of N doping in ZnIn2S4 provides a strong electron aggregation ability for improving the efficiency of charge separation. Meanwhile, the increased valence band width and the elevated conduction band, respectively, promote the mobility of holes and provide more reductive photogenerated electrons. As a result, 2D heavily N-doped ZnIn2S4 exhibited superior photocatalytic hydrogen production compared to the pristine ZnIn2S4. The optimal hydrogen evolution rate is 11 086 mu mol g(-1) h(-1) under visible light irradiation. This work contributes to the improvement of photocatalytic performance in 2D ZnIn2S4 and provides an in-depth understanding of heteroatom doped photocatalysts.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据